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Power Mosfet IPB020NE7N3GATMA1

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    MPN IPB020NE7N3 G
    Other # IPB020NE7N3GATMA1
    Mfr. Infineon
    Oneyac # A-IPB020NE7N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Operating temperature : -55°C~175°C

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    height 4.4mm
    Qg-gate charge 155nC
    Drain-source voltage Vds 75V
    Forward Transconductance-Minimum 98S
    Rise Time 26ns
    Series OptiMOS3
    length 10mm
    Gate voltage Vgs 10V
    Continuous Drain Current Id 120A
    Rds On(Max)@Id,Vgs 2mΩ
    Configuration Single
    Typical on-delay time 19ns
    width 9.25mm
    Fall time 22ns
    Number of channels 1Channel
    Operating temperature -55°C~175°C
    Pd-power dissipation (Max) 300W
    Typical off delay time 70ns
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