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Power MOSFET IPB017N08N5ATMA1

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    MPN IPB017N08N5
    Other # IPB017N08N5ATMA1
    Mfr. Infineon
    Oneyac # A-IPB017N08N5
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 80V
    Continuous drain current Id 120A
    Rds On(Max)@Id,Vgs 1.5mΩ
    Gate voltage Vgs 20V
    QG gate charge 223nC
    to configure Single
    Pd power dissipation (Max) 375W
    height 4.4mm
    length 10mm
    Series OptiMOS5
    FET type N-Channel
    width 9.25mm
    Forward transconductance - minimum value 114S
    Descent time 37ns
    rise time 36ns
    Typical shutdown delay time 102ns
    Typical connection delay time 40ns
    working temperature -55°C~175°C
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