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Power MOSFET BSC010N04LSIATMA1

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    MPN BSC010N04LSI
    Other # BSC010N04LSIATMA1
    Mfr. Infineon
    Oneyac # A-BSC010N04LSI
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 40V
    Continuous drain current Id 100A
    Rds On(Max)@Id,Vgs 900uΩ
    Gate voltage Vgs 20V
    QG gate charge 122nC
    to configure Single
    Pd power dissipation (Max) 139W
    height 1.27mm
    length 5.9mm
    Series OptiMOS5
    FET type N-Channel
    width 5.15mm
    Forward transconductance - minimum value 130S
    Descent time 17ns
    rise time 48ns
    Typical shutdown delay time 72ns
    Typical connection delay time 22ns
    working temperature -55°C~150°C
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