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Power MOSFET BSC011N03LSATMA1 8-PowerTDFN

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    MPN BSC011N03LS
    Other # BSC011N03LSATMA1
    Mfr. Infineon
    Oneyac # A-BSC011N03LS
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerTDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum value) 4700pF @ 15V
    working temperature -55°C~150°C(TJ)
    Drain source voltage Vds 30V
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 72nC @ 10V
    Number of channels 1Channel
    Continuous drain current Id 100A
    Rds On(Max)@Id,Vgs 1.1mΩ@30A,10V
    Gate voltage Vgs 10V
    QG gate charge 72nC
    to configure SingleQuadDrainTripleSource
    Pd power dissipation (Max) 96W
    height 1.27mm
    length 5.9mm
    FET type N-Channel
    width 5.15mm
    Forward transconductance - minimum value 85S
    Descent time 6.2ns
    rise time 8.8ns
    Typical shutdown delay time 37ns
    Typical connection delay time 6.7ns
    Package/Enclosure 8-PowerTDFN
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