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Power MOSFET BSC011N03LSIATMA1

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    MPN BSC011N03LSI
    Other # BSC011N03LSIATMA1
    Mfr. Infineon
    Oneyac # A-BSC011N03LSI
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 100A
    Rds On(Max)@Id,Vgs 1.1mΩ
    Gate voltage Vgs 10V
    QG gate charge 68nC
    to configure SingleQuadDrainTripleSource
    Pd power dissipation (Max) 96W
    height 1.27mm
    length 5.9mm
    FET type N-Channel
    width 5.15mm
    Forward transconductance - minimum value 80S
    Descent time 6.2ns
    rise time 9.2ns
    Typical shutdown delay time 35ns
    Typical connection delay time 6.4ns
    working temperature -55°C~150°C
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