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Power MOSFET BSB044N08NN3GXUMA1

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    MPN BSB044N08NN3 G
    Other # BSB044N08NN3GXUMA1
    Mfr. Infineon
    Oneyac # A-BSB044N08NN3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 80V
    Continuous drain current Id 90A
    Rds On(Max)@Id,Vgs 3.7mΩ
    Gate voltage Vgs 20V
    QG gate charge 73nC
    to configure Single
    Pd power dissipation (Max) 78W
    height 0.7mm
    length 6.35mm
    Series OptiMOS3
    FET type N-Channel
    width 5.05mm
    Forward transconductance - minimum value 36S
    Descent time 7ns
    rise time 9ns
    Typical shutdown delay time 26ns
    Typical connection delay time 14ns
    working temperature -40°C~150°C
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