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Power MOSFET 

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    MPN SIHD2N80E-GE3
    Mfr. Vishay
    Oneyac # A-SIHD2N80E-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    FET type N-Channel
    Drain source voltage Vds 800V
    Continuous drain current Id 2.8A(Tc)
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 19.6nC
    Gate voltage Vgs ±30V
    Input capacitance (Ciss) at different Vds (maximum value) 315pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 100V
    Pd power dissipation (Max) 62.5W(Tc)
    Rds On(Max)@Id,Vgs 2.75Ω@1A,10V
    working temperature -55°C~150°C(TJ)
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
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