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Power Mosfet 

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    MPN SIHD2N80E-GE3
    Mfr. Vishay
    Oneyac # A-SIHD2N80E-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    fet type N-Channel
    Drain-source voltage Vds 800V
    Continuous Drain Current Id 2.8A(Tc)
    Vgs (th) (maximum) at different Ids 4V @ 250µA
    Gate Charge (Qg) at Different Vgs (Maximum) 19.6nC
    Gate voltage Vgs ±30V
    Input capacitance (Ciss) at different Vds (maximum) 315pF
    Voltage, coupled to input capacitance (Ciss) (max) @ Vds 100V
    Pd-power dissipation (Max) 62.5W(Tc)
    Rds On(Max)@Id,Vgs 2.75Ω@1A,10V
    Operating temperature -55°C~150°C(TJ)
    Voltage, coupled to gate charge (Qg) (max) @ Vgs 10V
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