Home   All Products > SIHD2N80E-GE3

Power MOSFET 

  • Image

    The image is for reference only.

    MPN SIHD2N80E-GE3
    Mfr. Vishay
    Oneyac # A-SIHD2N80E-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    FET type N-Channel
    Drain source voltage Vds 800V
    Continuous drain current Id 2.8A(Tc)
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 19.6nC
    Gate voltage Vgs ±30V
    Input capacitance (Ciss) at different Vds (maximum value) 315pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 100V
    Pd power dissipation (Max) 62.5W(Tc)
    Rds On(Max)@Id,Vgs 2.75Ω@1A,10V
    working temperature -55°C~150°C(TJ)
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Find the similar products:

    Q : Are the goods on the platform genuine?

    A : Please rest assured that the products sold in the Oneyac mall are all original and genuine products. We are the authorized dealer of electronic components of well-known brands both at home and abroad, and we guarantee the quality from the source.

    Q : Can you provide the original factory agent qualification certificate?

    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

    Q : Can I return it?

    A : Please carefully check the product model information before placing the order. If the order is wrongly ordered due to your own reasons, we will not accept the return or replacement requirements.If the product quantity is wrong, the model is inconsistent, and the product quality problem occurs, please be sure to keep the original packaging and label, and contact us within two weeks to apply for return.

    In Stock :  0 Lead Time:15W

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 3,000 ETD HK Contact Us
    Min. 1 Mult. 1

    Recommended Product

    Image MPN Mfr. Datasheet Product Category Parameter Unit Price In Stock
    SIHD2N80E-GE3 Vishay  Datasheet Power MOSFET

    No Price 0
    R6002END3TL1 ROHM Semiconductor  Datasheet Power MOSFET

    TO-252-3

    $0.8944 

    Qty. Unit Price
    1: $0.8944
    10: $0.7341
    50: $0.4969
    100: $0.4718
    500: $0.44
    1000: $0.4254
    2000: $0.3949
    4000: $0.3936
    2500
    R6002END3TL1 ROHM Semiconductor  Datasheet Power MOSFET

    TO-252-3

    $0.8944 

    Qty. Unit Price
    1: $0.8944
    10: $0.7341
    50: $0.4969
    100: $0.4718
    500: $0.44
    1000: $0.4254
    2000: $0.3949
    4000: $0.3936
    1736
    STD2N62K3 STMicro  Datasheet Universal MOSFET

    TO-252-3

    $0.7408 

    Qty. Unit Price
    1: $0.7408
    100: $0.6176
    1250: $0.5598
    2500: $0.5187
    57
    STD2N62K3 STMicro  Datasheet Universal MOSFET

    TO-252-3

    No Price 0
    R6002END3TL1 ROHM Semiconductor  Datasheet Power MOSFET

    TO-252-3

    No Price 0