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Power MOSFET TO-252-3

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    MPN R6002END3TL1
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A-R6002END3TL1
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Continuous drain current Id 1.7A
    Pd power dissipation (Max) 26W
    QG gate charge 6.5nC
    Rds On(Max)@Id,Vgs 3.4Ω
    Drain source voltage Vds 600V
    Gate voltage Vgs 2V
    rise time 16ns
    Descent time 60ns
    Typical shutdown delay time 25ns
    Typical connection delay time 12ns
    Package/Enclosure TO-252-3
    Forward transconductance - minimum value 0.5S
    Number of channels 1Channel
    to configure Single
    working temperature -55°C~150°C
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