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Power MOSFET SOIC

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    MPN IRF7380TRPBF
    Mfr. Infineon
    Oneyac # A-IRF7380TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    N-Channel 80 V 2 W 15 nC Hexfet Power Mosfet Surface Mount - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series HEXFET®
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 23nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 660pF @ 25V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOIC
    Number of channels 2Channel
    Drain source voltage Vds 80V
    Continuous drain current Id 3.6A
    Rds On(Max)@Id,Vgs 73mΩ
    Gate voltage Vgs 20V
    QG gate charge 15nC
    to configure Dual
    Pd power dissipation (Max) 2W
    height 1.75mm
    length 4.9mm
    FET type 2N-Channel
    width 3.9mm
    Forward transconductance - minimum value 4.3S
    Descent time 17ns
    rise time 10ns
    Typical shutdown delay time 41ns
    Typical connection delay time 9ns
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    In Stock :  0 Lead Time:14W

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