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Power MOSFET SOIC-8

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    MPN SI4850EY-T1-GE3
    Mfr. Vishay
    Oneyac # A36-SI4850EY-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series TrenchFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 3V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 27nC @ 10V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 1.7W(Ta)
    working temperature -55°C~175°C(TJ)
    Package/Enclosure SOIC-8
    FET type N-Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 6A
    Rds On(Max)@Id,Vgs 22mΩ
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    In Stock :  4,089

    Qty. Unit Price Ext. Price
    20+ $0.6374 $12.748
    100+ $0.5309 $53.09
    1,250+ $0.4837 $604.625

    Full Reel (Order in multiples of 2500)

    2,500+ $0.4472 $1,118

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Date: Within 2 years

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