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    MPN DMT6016LSS-13
    Mfr. Diodes Incorporated
    Oneyac # A-DMT6016LSS-13
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    DMT6016 Series 60 V 9.2 A 18 mOhm N-Channel Enhancement Mode Mosfet - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 17nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 864pF @ 30V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SO
    Continuous drain current Id 9.2A
    Pd power dissipation (Max) 2.1W
    QG gate charge 17nC
    Rds On(Max)@Id,Vgs 18mΩ
    Drain source voltage Vds 60V
    Gate voltage Vgs 1V
    rise time 5.2ns
    Descent time 7ns
    Typical shutdown delay time 13ns
    Typical connection delay time 3.4ns
    Series DMT60
    Number of channels 1Channel
    to configure Single
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