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Power MOSFET 

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    MPN IRFR2307ZTRLPBF
    Mfr. Infineon
    Oneyac # A3a-IRFR2307ZTRLPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : HEXFET

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 100µA
    Gate charge (Qg) at different Vgs (maximum value) 75nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 2190pF @ 25V
    working temperature -55°C~175°C(TJ)
    Continuous drain current Id 53A
    Rds On(Max)@Id,Vgs 16mΩ
    Minimum gate threshold voltage 2V
    pin number 3
    Transistor configuration single
    category Power MOSFET
    Pd power dissipation (Max) 110W
    height 2.39mm
    Number of components per chip 1 Ohms
    width 6.22mm
    Series HEXFET
    Transistor material Si
    Typical shutdown delay time 44 ns
    Typical connection delay time 16 ns
    length 6.73mm
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    In Stock :  3,000

    Qty. Unit Price Ext. Price

    Full Reel (Order in multiples of 3000)

    3,000+ $0.683 $2,049

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 3,000 Mult. 3,000

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