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Power MOSFET IPD30N08S2L21ATMA1 PG-TO252-3-11

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    MPN IPD30N08S2L-21
    Other # IPD30N08S2L21ATMA1
    Mfr. Infineon
    Oneyac # A33-IPD30N08S2L-21
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : PG-TO252-3-11

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum value) 1650pF @ 25V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 136W(Tc)
    Rds On(Max)@Id,Vgs 20.5mΩ@25A,10V
    working temperature -55°C~175°C(TJ)
    Package/Enclosure PG-TO252-3-11
    FET type N-Channel
    Drain source voltage Vds 75V
    Continuous drain current Id 30A(Tc)
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2V @ 80µA
    Gate charge (Qg) at different Vgs (maximum value) 72nC @ 10V
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    In Stock :  2,320

    Qty. Unit Price Ext. Price
    30+ $0.7156 $21.468
    50+ $0.6891 $34.455
    100+ $0.6626 $66.26
    500+ $0.6626 $331.3
    1,000+ $0.6493 $649.3
    2,000+ $0.6493 $1,298.6

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 30 Mult. 1

    Special Note

    Production Year: 2022