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Power MOSFET BSZ12DN20NS3 G 8-PowerTDFN

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    MPN BSZ12DN20NS3GATMA1
    Other # BSZ12DN20NS3 G
    Mfr. Infineon
    Oneyac # A3a-BSZ12DN20NS3GATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerTDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 11.3A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 125 milliohms @ 5.7A, 10V
    Vgs (th) (maximum value) for different IDs 4V @ 25uA
    Input capacitance (Ciss) at different Vds (maximum value) 680pF @ 100V
    Gate charge (Qg) at different Vgs (maximum value) 8.7nC @ 10V
    Power dissipation (maximum value) 50W(Tc)
    Package/Enclosure 8-PowerTDFN
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 200V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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    In Stock :  4,894

    Qty. Unit Price Ext. Price
    7+ $1.0724 $7.5068
    10+ $0.9248 $9.248
    25+ $0.9066 $22.665
    100+ $0.7636 $76.36
    250+ $0.756 $189
    500+ $0.6723 $336.15

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 5,000 ETD HK 1~2 Weeks
    Min. 7 Mult. 1

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