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Power MOSFET TO-220AB-3

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    MPN IRF640PBF
    Mfr. Vishay
    Oneyac # A3-IRF640PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : IRF

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 70nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1300pF @ 25V
    working temperature -55°C~150°C(TJ)
    Continuous drain current Id 3.3A
    Pd power dissipation (Max) 36W
    QG gate charge 8.2nC
    Rds On(Max)@Id,Vgs 1.5Ω
    Drain source voltage Vds 200V
    Gate voltage Vgs 2V
    rise time 17ns
    Descent time 8.9ns
    Typical shutdown delay time 14ns
    Typical connection delay time 8.2ns
    width 4.7mm
    Package/Enclosure TO-220AB-3
    Forward transconductance - minimum value 0.8S
    Series IRF
    Number of channels 1Channel
    to configure Single
    length 10.41mm
    height 15.49mm
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    In Stock :  34,000 Lead Time:14W

    Qty. Unit Price Ext. Price
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    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 5~17 Working Days
    Min. 1 Mult. 1

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