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Power Mosfet TO-220AB

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    MPN IRF640NPBF
    Mfr. Infineon
    Oneyac # A-IRF640NPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 200 V 0.15 Ohm 67 nC 150 W Flange Mount Mosfet - TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Package/Enclosure TO-220AB
    Pd-power dissipation (Max) 150W(Tc)
    Gate Charge (Qg) at Different Vgs (Maximum) 67nC @ 10V
    Operating temperature -55°C~175°C(TJ)
    Input capacitance (Ciss) at different Vds (maximum) 1160pF @ 25V
    fet type N-Channel
    Gate voltage Vgs ±20V
    Drain-source voltage Vds 200V
    Rds On(Max)@Id,Vgs 150mΩ@11A,10V
    Vgs (th) (maximum) at different Ids 4V @ 250µA
    Continuous Drain Current Id 18A
    Drive voltage @Rds On (Max), Rds On (Min) 10V
    Series HEXFET®
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    In Stock :  1,000 Lead Time:14W

    Qty. Unit Price Ext. Price
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    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 5~7 Working Days
    Min. 1 Mult. 1

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