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Power MOSFET SOIC

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    MPN IRF7341TRPBF
    Mfr. Infineon
    Oneyac # A33-IRF7341TRPBF-0
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Dual N-Channel 55 V 2 W 36 nC Generation V Surface Mount Mosfet - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series HEXFET®
    Rds On(Max)@Id,Vgs 50mΩ@4.7A,10V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 36nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 740pF @ 25V
    Pd power dissipation (Max) 2W
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOIC
    FET type N-Channel
    Drain source voltage Vds 55V
    Continuous drain current Id 4.7A
    Gate voltage Vgs ±20V
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    In Stock :  1,690

    Qty. Unit Price Ext. Price
    30+ $1.0362 $31.086
    50+ $0.799 $39.95
    100+ $0.7195 $71.95
    500+ $0.6679 $333.95
    1,000+ $0.6573 $657.3

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 4,000 ETD HK 1~2 Weeks
    Min. 30 Mult. 1

    Special Note

    Production Year: 2023

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