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Power MOSFET TO-220AB

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    MPN IRF1010EPBF
    Mfr. Infineon
    Oneyac # A33-IRF1010EPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 60 V 200 W 130 nC Hexfet Power Mosfet Flange Mount - TO-220AB

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 130nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 3210pF @ 25V
    Pd power dissipation (Max) 200W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 130nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 3210pF @ 25V
    Rds On(Max)@Id,Vgs 12mΩ@50A,10V
    FET type N-Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 84A
    Package/Enclosure TO-220AB
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    In Stock :  1,000

    Qty. Unit Price Ext. Price
    20+ $1.6364 $32.728
    50+ $0.9845 $49.225
    100+ $0.9024 $90.24
    500+ $0.8481 $424.05

    Full Reel (Order in multiples of 1000)

    1,000+ $0.8375 $837.5

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Year: 2023

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