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Power MOSFET IPD80R1K0CE TO-252-3

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    MPN IPD80R1K0CEATMA1
    Other # IPD80R1K0CE
    Mfr. Infineon
    Oneyac # A36-IPD80R1K0CEATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-252-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Package/Enclosure TO-252-3
    FET type N-Channel
    Pd power dissipation (Max) 83W
    Rds On(Max)@Id,Vgs -55°C~150°C
    working temperature -55°C~150°C
    Gate voltage Vgs ±20V
    Drain source voltage Vds 800V
    Continuous drain current Id 5.7A
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    In Stock :  19

    Qty. Unit Price Ext. Price
    7+ $1.0815 $7.5705

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 7 Mult. 1

    Special Note

    Production Date: 22+

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