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Power MOSFET BSS806N H6327 TO-236-3,SC-59,SOT-23-3

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    MPN BSS806NH6327XTSA1
    Other # BSS806N H6327
    Mfr. Infineon
    Oneyac # A36-BSS806NH6327XTSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-236-3,SC-59,SOT-23-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 2.3A(Ta)
    FET type N channels
    Vgs (maximum value) ±8V
    On resistance at different Id and Vgs (maximum value) 57 milliohms @ 2.3A, 2.5V
    Vgs (th) (maximum value) for different IDs 750mV @ 11uA
    Input capacitance (Ciss) at different Vds (maximum value) 529pF @ 10V
    Gate charge (Qg) at different Vgs (maximum value) 1.7nC @ 2.5V
    Power dissipation (maximum value) 500mW(Ta)
    Package/Enclosure TO-236-3,SC-59,SOT-23-3
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 20V
    Drive voltage (maximum RdsOn, minimum RdsOn) 1.8V,2.5V
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    In Stock :  9,062

    Qty. Unit Price Ext. Price
    70+ $0.1039 $7.273
    200+ $0.0847 $16.94
    1,500+ $0.077 $115.5

    Full Reel (Order in multiples of 3000)

    3,000+ $0.072 $216

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 70 Mult. 1

    Special Note

    Production Date: 23+

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