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Power MOSFET BSC190N15NS3GATMA1 TDSON-8-1

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    MPN BSC190N15NS3 G
    Other # BSC190N15NS3GATMA1
    Mfr. Infineon
    Oneyac # A36-BSC190N15NS3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TDSON-8-1 Series : OptiMOS3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 150V
    Continuous drain current Id 50A
    Rds On(Max)@Id,Vgs 19mΩ@50A,10V
    Gate voltage Vgs ±20V
    QG gate charge 31nC
    to configure Single
    Pd power dissipation (Max) 125W
    height 1.27mm
    length 5.9mm
    Series OptiMOS3
    width 5.15mm
    Forward transconductance - minimum value 29S
    Descent time 6ns
    rise time 53ns
    Typical shutdown delay time 25ns
    Typical connection delay time 15ns
    working temperature -55°C~150°C
    FET type N-Channel
    Package/Enclosure TDSON-8-1
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    In Stock :  499

    Qty. Unit Price Ext. Price
    10+ $0.7408 $7.408
    100+ $0.5294 $52.94

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 5,000 ETD HK 1~2 Weeks
    Min. 10 Mult. 1

    Special Note

    Production Date: 22+