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Power MOSFET TO-220AB

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    MPN IRFB3307ZPBF
    Mfr. Infineon
    Oneyac # A36-IRFB3307ZPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220AB Series : HEXFET®

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 110nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 4750pF @ 50V
    Gate charge (Qg) at different Vgs (maximum value) 110nC
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Input capacitance (Ciss) at different Vds (maximum value) 4750pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 50V
    Package/Enclosure TO-220AB
    Number of channels 1Channel
    Drain source voltage Vds 75V
    Continuous drain current Id 120A
    Rds On(Max)@Id,Vgs 4.6mΩ
    Gate voltage Vgs 20V
    QG gate charge 79nC
    to configure Single
    Pd power dissipation (Max) 230W
    height 15.65mm
    length 10mm
    FET type N-Channel
    width 4.4mm
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    In Stock :  33

    Qty. Unit Price Ext. Price
    8+ $0.9066 $7.2528

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 1~2 Weeks
    Min. 8 Mult. 1

    Special Note

    Production Date: 20+

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