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Power MOSFET TO-220AB

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    MPN IRF1407PBF
    Mfr. Infineon
    Oneyac # A-IRF1407PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 75 V 330 W 160 nC Hexfet Power Mosfet Flange Mount - TO-220AB

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 250nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 5600pF @ 25V
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 250nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 5600pF @ 25V
    Package/Enclosure TO-220AB
    Continuous drain current Id 130A
    Pd power dissipation (Max) 330W
    QG gate charge 160 nC
    Rds On(Max)@Id,Vgs 7.8mΩ
    Drain source voltage Vds 75V
    Gate voltage Vgs 20V
    width 4.4mm
    FET type N-Channel
    Number of channels 1 Channel
    to configure Single
    length 10mm
    height 15.65mm
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    In Stock :  1,000 Lead Time:14W

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 5~7 Working Days
    Min. 1 Mult. 1

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