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Power MOSFET SOIC-8

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    MPN SI7145DP-T1-GE3
    Mfr. Vishay
    Oneyac # A36-SI7145DP-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series TrenchFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.3V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 413nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 15660pF @ 15V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 6.25W(Ta),104W(Tc)
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOIC-8
    FET type P-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 60A
    Rds On(Max)@Id,Vgs 2.6mΩ
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    In Stock :  5,133

    Qty. Unit Price Ext. Price
    7+ $1.1515 $8.0605
    100+ $0.9598 $95.98
    750+ $0.8883 $666.225
    1,500+ $0.8457 $1,268.55

    Full Reel (Order in multiples of 3000)

    3,000+ $0.8062 $2,418.6

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 7 Mult. 1

    Special Note

    Production Date: 23+

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