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Power MOSFET SOIC-8

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    MPN SI4401DDY-T1-GE3
    Mfr. Vishay
    Oneyac # A36-SI4401DDY-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC-8 Series : SI4

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 95nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 3007pF @ 20V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOIC-8
    Continuous drain current Id 16.1A
    Pd power dissipation (Max) 6.3W
    QG gate charge 64nC
    Rds On(Max)@Id,Vgs 15mΩ
    Drain source voltage Vds 40V
    Gate voltage Vgs 1.2V
    rise time 11ns
    Descent time 9ns
    Typical shutdown delay time 45ns
    Typical connection delay time 13ns
    Forward transconductance - minimum value 37S
    Series SI4
    Number of channels 1Channel
    to configure Single
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    In Stock :  8,337

    Qty. Unit Price Ext. Price
    20+ $0.3681 $7.362
    100+ $0.283 $28.3
    1,250+ $0.2465 $308.125

    Full Reel (Order in multiples of 2500)

    2,500+ $0.2328 $582

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Date: 23+

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