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Power Mosfet 

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    MPN IRFB4110PBF
    Mfr. Infineon
    Oneyac # A3-IRFB4110PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 100 V 370 W 210 nC Silicon Through Hole Mosfet - TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 210nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 9620pF @ 50V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 370W(Tc)
    Rds On(Max)@Id,Vgs 4.5mΩ@75A,10V
    working temperature -55°C~175°C(TJ)
    FET type N-Channel
    Continuous drain current Id 180A
    Drain source voltage Vds 100V
    Encapsulation/shell TO-220AB
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    In Stock :  0 Lead Time:14W

    Qty. Unit Price Ext. Price
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    MPQ 1,000 ETD HK Contact Us
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