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Power Mosfet IPAK(TO-251)

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    MPN IRFU3410PBF
    Mfr. Infineon
    Oneyac # A3-IRFU3410PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : IPAK(TO-251)

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Pd-power dissipation (Max) 3W(Ta),110W(Tc)
    Input capacitance (Ciss) at different Vds (maximum) 1690pF @ 25V
    fet type N-Channel
    Package/Enclosure IPAK(TO-251)
    Operating temperature -55°C~175°C(TJ)
    Rds On(Max)@Id,Vgs 39mΩ@18A,10V
    Drain-source voltage Vds 100V
    Vgs (th) (maximum) at different Ids 4V @ 250µA
    Gate Charge (Qg) at Different Vgs (Maximum) 56nC @ 10V
    Continuous Drain Current Id 31A
    Vgs (th) (maximum) at different Ids 4V @ 250µA
    Gate Charge (Qg) at Different Vgs (Maximum) 56nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum) 1690pF @ 25V
    Drive voltage @Rds On (Max), Rds On (Min) 10V
    Series HEXFET®
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    In Stock :  3,000 Lead Time:14W

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 5~17 Working Days
    Min. 1 Mult. 1

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