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General MOSFET 

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    MPN FDN302P
    Mfr. ON Semiconductor
    Oneyac # A-FDN302P-1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

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    Datasheet

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    Specifications FAQ

    Description Details Operation
    Product Category General MOSFET
    series PowerTrench®
    Continuous drain current Id 2.4A(Ta)
    Drive voltage @ Rds On (Max), Rds On (Min) 2.5V,4.5V
    Vgs (th) at different IDs (maximum value) 1.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 14nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 882pF @ 10V
    Gate voltage Vgs ±12V
    Pd power dissipation (Max) 500mW(Ta)
    Rds On(Max)@Id,Vgs 55m Ohms@2.4A,4.5V
    working temperature -55°C~150°C(TJ)
    Encapsulation/shell TO-236-3,SC-59,SOT-23-3
    Encapsulation/shell SuperSOT
    FET type P-Channel
    Drain source voltage Vds 20V
    Continuous drain current Id 2.4A
    Vgs (th) at different IDs (maximum value) 1.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 14nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 882pF @ 10V
    power 500mW(Ta)
    Rds On(Max)@Id,Vgs 55 milliohms @ 2.4A, 4.5V
    working temperature -55°C ~ 150°C(TJ)
    Encapsulation/shell SuperSOT-3
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