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Power MOSFET Power56 Power 8-PowerTDFN

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    MPN FDMS3660S
    Mfr. ON Semiconductor
    Oneyac # A-FDMS3660S-1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : Power56 Package/Enclosure : Power Package/Enclosure : 8-PowerTDFN

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    Datasheet

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    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series PowerTrench®
    FET type 2N channel (double) asymmetric type
    Continuous drain current Id 13A,30A
    Rds On(Max)@Id,Vgs 8m Ohms@13A,10V
    Vgs (th) at different IDs (maximum value) 2.7V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 29nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1765pF @ 15V
    Pd power dissipation (Max) 1W
    working temperature -55°C~150°C(TJ)
    Package/Enclosure Power56
    Package/Enclosure Power
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 13A/30A
    FET type 2 N channel (double) asymmetric type
    FET type Logic level gate
    Rds On(Max)@Id,Vgs 8 milliohms @ 13A, 10V
    Vgs (th) at different IDs (maximum value) 2.7V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 29nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1765pF @ 15V
    Power Rating 1W
    working temperature -55°C ~ 150°C(TJ)
    Package/Enclosure 8-PowerTDFN
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