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Power Mosfet HSMT

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    MPN RQ3E120ATTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3-RQ3E120ATTB
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Series : RQ

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    height 0.85mm
    Input capacitance (Ciss) at different Vds (maximum) 3200pF @ 15V
    Continuous Drain Current Id 12A
    Typical off delay time 140ns
    Rise Time 30ns
    Qg-gate charge 62nC
    Pd-power dissipation (Max) 2W
    Drive voltage @Rds On (Max), Rds On (Min) 4.5V,10V
    Gate voltage Vgs ±20V
    Number of channels 1Channel
    Vgs (th) (maximum) at different Ids 2.5V @ 1mA
    Gate Charge (Qg) at Different Vgs (Maximum) 62nC @ 10V
    Fall time 95ns
    width 2.4mm
    Configuration Single
    Operating temperature 150°C(TJ)
    fet type P-Channel
    Package/Enclosure HSMT
    Drain-source voltage Vds 39V
    length 3mm
    Series RQ
    Rds On(Max)@Id,Vgs 8mΩ@-12A,-10V
    Typical on-delay time 20ns
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    In Stock :  200 Lead Time:16W

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 5~17 Working Days
    Min. 1 Mult. 1

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