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Power MOSFET 8-PowerVDFN

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    MPN RQ3C150BCTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3-RQ3C150BCTB
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    MOSFET P-CHANNEL 20V 30A 8HSMT

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    FET type P-Channel
    Drain source voltage Vds 20V
    Continuous drain current Id 30A(Tc)
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V
    Vgs (th) at different IDs (maximum value) 1.2V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs 60nC @ 4.5V
    Gate voltage Vgs ±8V
    Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 10V
    Pd power dissipation (Max) 20W(Tc)
    Rds On(Max)@Id,Vgs 6.7mΩ@15A,4.5V
    working temperature -55℃~150℃
    Package/Enclosure 8-PowerVDFN
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    In Stock :  190 Lead Time:16W

    Qty. Unit Price Ext. Price
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    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 5~17 Working Days
    Min. 1 Mult. 1

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