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Power MOSFET HSOP8 (Single)

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    MPN RS6G100BGTB1
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3-RS6G100BGTB1
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs Lead Free/Rohs
    Description
    Package/Enclosure : HSOP8 (Single) Gate voltage Vgs : ±20V Rds On(Max)@Id,Vgs : 3.4mΩ@90A,10V

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Package/Enclosure HSOP8 (Single)
    FET type N-Channel
    Pd power dissipation (Max) 59W
    Rds On(Max)@Id,Vgs 3.4mΩ@90A,10V
    working temperature -55°C~150℃
    Gate voltage Vgs ±20V
    Drain source voltage Vds 40V
    Continuous drain current Id 100A
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    In Stock :  100

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    MPQ 2,500 ETD HK 5~17 Working Days
    Min. 1 Mult. 1

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