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Power Mosfet SOIC-8

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    MPN SIR422DP-T1-GE3
    Mfr. Vishay
    Oneyac # A-SIR422DP-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Series SIR
    Part number alias SIR422DP-GE3
    Drive voltage @Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) (maximum) at different Ids 2.5V @ 250µA
    Gate Charge (Qg) at Different Vgs (Maximum) 48nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum) 1785pF @ 20V
    Operating temperature -55°C~150°C(TJ)
    Package/Enclosure SOIC-8
    Continuous Drain Current Id 20.5A
    Pd-power dissipation (Max) 34.7W
    Qg-gate charge 48nC
    Rds On(Max)@Id,Vgs 6.6mΩ@20A,10V
    Drain-source voltage Vds 40V
    Gate voltage Vgs ±20V
    Rise Time 84ns
    Fall time 11ns
    Typical off delay time 28ns
    Typical on-delay time 19ns
    Forward Transconductance-Minimum 70S
    fet type N-Channel
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