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MOSFET PowerDI3333-8

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    MPN DMN3008SFGQ-13
    Mfr. Diodes Incorporated
    Oneyac # A-DMN3008SFGQ-13
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : PowerDI3333-8

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 900mW(Ta)
    RdsOn(Max)@Id,Vgs 4.4mΩ@13.5A,10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 3690 pF @ 10 V
    Gate charge (Qg) at different Vgs (maximum value) 86 nC @ 10 V
    Package/Enclosure PowerDI3333-8
    working temperature -55℃~150℃(TJ)
    Drain source voltage Vds 30V
    Continuous drain current Id 17.6A(Ta),62A(Tc)
    driving voltage 4.5V,10V
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