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Power MOSFET HSMT-8

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    MPN RQ3E180GNTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A36-RQ3E180GNTB
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : HSMT-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Continuous drain current Id 18A
    Pd power dissipation (Max) 2W
    QG gate charge 22.4nC
    Rds On(Max)@Id,Vgs 4.3mΩ@18A,10V
    Drain source voltage Vds 30V
    Gate voltage Vgs ±20V
    rise time 6.9ns
    Descent time 10.2ns
    Typical shutdown delay time 56.8ns
    Typical connection delay time 16.5ns
    Package/Enclosure HSMT-8
    FET type N-Channel
    Forward transconductance - minimum value 17S
    Number of channels 1Channel
    to configure Single
    working temperature -55°C~150°C
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    In Stock :  2,991

    Qty. Unit Price Ext. Price
    30+ $0.3423 $10.269
    100+ $0.2754 $27.54
    750+ $0.2434 $182.55
    1,500+ $0.2297 $344.55

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 30 Mult. 1

    Special Note

    Production Date: 22+

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