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Power Mosfet SPB21N50C3 TO-263-3, D²Pak (2-lead + tab), TO-263AB

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    MPN SPB21N50C3ATMA1
    Other # SPB21N50C3
    Mfr. Infineon
    Oneyac # A-SPB21N50C3ATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263-3, D²Pak (2-lead + tab), TO-263AB

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Input capacitance (Ciss) (maximum) at different Vds 2400pF @ 25V
    technology MOSFET (metal oxide)
    Drain-Source Voltage (Vdss) 560V
    Operating temperature -55°C ~ 150°C(TJ)
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Current at 25°C-Continuous Drain (Id) 21A(Tc)
    Package/Enclosure TO-263-3, D²Pak (2-lead + tab), TO-263AB
    Gate charge at different VGS (QG) (maximum) 95nC @ 10V
    Power dissipation (maximum) 208W(Tc)
    fet type n channel
    Vgs(th) (maximum) when different Id 3.9V @ 1mA
    On resistance at different Id and Vgs (maximum) 190 milliohm @ 13.1a, 10V
    Vgs(Max) ±20V
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