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Power MOSFET TO-263-3,D²Pak,TO-263AB

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    MPN R6024ENJTL
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A-R6024ENJTL
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263-3,D²Pak,TO-263AB

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 1mA
    Gate charge (Qg) at different Vgs (maximum value) 70nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1650pF @ 25V
    working temperature 150°C(TJ)
    Package/Enclosure TO-263-3,D²Pak,TO-263AB
    Continuous drain current Id 24A
    Pd power dissipation (Max) 245W
    QG gate charge 70nC
    Rds On(Max)@Id,Vgs 150mΩ
    Drain source voltage Vds 600V
    Gate voltage Vgs 2V
    rise time 50ns
    Descent time 50ns
    Typical shutdown delay time 180ns
    Typical connection delay time 35ns
    Series SuperJunction-MOSEN
    Number of channels 1Channel
    to configure Single
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    Min. 1 Mult. 1

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