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Power Mosfet IPW60R190P6 TO-247-3

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    MPN IPW60R190P6FKSA1
    Other # IPW60R190P6
    Mfr. Infineon
    Oneyac # A-IPW60R190P6FKSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-247-3

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Vgs(th) (maximum) when different Id 4.5V @ 630u
    fet type n channel
    Input capacitance (Ciss) (maximum) at different Vds 1750pF @ 100V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Drain-Source Voltage (Vdss) 600V
    On resistance at different Id and Vgs (maximum) 190 milliohm @ 7.6a, 10V
    Gate charge at different VGS (QG) (maximum) 11nC @ 10V
    Vgs(Max) ±20V
    Power dissipation (maximum) 151W(Tc)
    Package/Enclosure TO-247-3
    Operating temperature -55°C ~ 150°C(TJ)
    Current at 25°C-Continuous Drain (Id) 20.2A(Tc)
    technology MOSFET (metal oxide)
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    Min. 1 Mult. 1

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