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Power MOSFET IPW60R180C7 TO-247-3

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    MPN IPW60R180C7XKSA1
    Other # IPW60R180C7
    Mfr. Infineon
    Oneyac # A-IPW60R180C7XKSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-247-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 13A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 180 milliohms @ 5.3A, 10V
    Vgs (th) (maximum value) for different IDs 4V @ 260uA
    Input capacitance (Ciss) at different Vds (maximum value) 1080pF @ 400V
    Gate charge (Qg) at different Vgs (maximum value) 24nC @ 10V
    Power dissipation (maximum value) 68W(Tc)
    Package/Enclosure TO-247-3
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 600V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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