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Power Mosfet IPP65R110CFDA TO-220-3

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    MPN IPP65R110CFDAAKSA1
    Other # IPP65R110CFDA
    Mfr. Infineon
    Oneyac # A-IPP65R110CFDAAKSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Gate charge at different VGS (QG) (maximum) 118nC @ 10V
    fet type n channel
    Vgs(Max) ±20V
    Vgs(th) (maximum) when different Id 4.5V @ 1.3mA
    On resistance at different Id and Vgs (maximum) 110 milliohm @ 12.7a, 10V
    Drain-Source Voltage (Vdss) 650V
    technology MOSFET (metal oxide)
    Operating temperature -40°C ~ 150°C(TJ)
    Package/Enclosure TO-220-3
    Current at 25°C-Continuous Drain (Id) 31.2A(Tc)
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Input capacitance (Ciss) (maximum) at different Vds 3240pF @ 100V
    Power dissipation (maximum) 277.8W(Tc)
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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