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Power MOSFET IPP65R045C7 TO-220-3

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    MPN IPP65R045C7XKSA1
    Other # IPP65R045C7
    Mfr. Infineon
    Oneyac # A-IPP65R045C7XKSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-220-3 Operating temperature : -55°C ~ 150°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs(Max) ±20V
    Current at 25°C-Continuous Drain (Id) 46A(Tc)
    Power dissipation (maximum) 227W(Tc)
    On resistance at different Id and Vgs (maximum) 45 milliohm @ 24.9a, 10V
    Vgs(th) (maximum) when different Id 4V @ 1.25mA
    fet type n channel
    Operating temperature -55°C ~ 150°C(TJ)
    technology MOSFET (metal oxide)
    Gate charge at different VGS (QG) (maximum) 93nC @ 10V
    Input capacitance (Ciss) (maximum) at different Vds 4340pF @ 400V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Package/Enclosure TO-220-3
    Drain-Source Voltage (Vdss) 650V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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