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Power MOSFET IPP180N10N3 G TO-220-3

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    MPN IPP180N10N3GXKSA1
    Other # IPP180N10N3 G
    Mfr. Infineon
    Oneyac # A-IPP180N10N3GXKSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 43A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 18 milliohms @ 33A, 10V
    Vgs (th) (maximum value) for different IDs 3.5V @ 33uA
    Input capacitance (Ciss) at different Vds (maximum value) 1800pF @ 50V
    Gate charge (Qg) at different Vgs (maximum value) 25nC @ 10V
    Power dissipation (maximum value) 71W(Tc)
    Package/Enclosure TO-220-3
    working temperature -55°C ~ 175°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 100V
    Drive voltage (maximum RdsOn, minimum RdsOn) 6V,10V
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