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Power Mosfet IPP16CN10N G TO-220-3

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    MPN IPP16CN10NGHKSA1
    Other # IPP16CN10N G
    Mfr. Infineon
    Oneyac # A-IPP16CN10NGHKSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    On resistance at different Id and Vgs (maximum) 16.5 milliohm @ 53a, 10V
    fet type n channel
    Operating temperature -55°C ~ 175°C(TJ)
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Current at 25°C-Continuous Drain (Id) 53A(Tc)
    Vgs(th) (maximum) when different Id 4V @ 61uA
    Input capacitance (Ciss) (maximum) at different Vds 3220pF @ 50V
    technology MOSFET (metal oxide)
    Package/Enclosure TO-220-3
    Vgs(Max) ±20V
    Gate charge at different VGS (QG) (maximum) 48nC @ 10V
    Drain-Source Voltage (Vdss) 100V
    Power dissipation (maximum) 100W(Tc)
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    A : Please carefully check the product model information before placing the order. If the order is wrongly ordered due to your own reasons, we will not accept the return or replacement requirements.If the product quantity is wrong, the model is inconsistent, and the product quality problem occurs, please be sure to keep the original packaging and label, and contact us within two weeks to apply for return.

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