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Power Mosfet IPD50P04P4-13 TO-252-3, DPak (2-lead + tab), SC-63

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    MPN IPD50P04P413ATMA1
    Other # IPD50P04P4-13
    Mfr. Infineon
    Oneyac # A-IPD50P04P413ATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-252-3, DPak (2-lead + tab), SC-63

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Operating temperature -55°C ~ 175°C(TJ)
    fet type p channel
    Vgs(th) (maximum) when different Id 4V @ 85uA
    On resistance at different Id and Vgs (maximum) 12.6 milliohm @ 50a, 10V
    Power dissipation (maximum) 58W(Tc)
    Drain-Source Voltage (Vdss) 40V
    Input capacitance (Ciss) (maximum) at different Vds 3670pF @ 25V
    Vgs(Max) ±20V
    Gate charge at different VGS (QG) (maximum) 51nC @ 10V
    technology MOSFET (metal oxide)
    Package/Enclosure TO-252-3, DPak (2-lead + tab), SC-63
    Current at 25°C-Continuous Drain (Id) 50A(Tc)
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