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Power Mosfet IPD50N06S4L-08 TO-252-3, DPak (2-lead + tab), SC-63

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    MPN IPD50N06S4L08ATMA2
    Other # IPD50N06S4L-08
    Mfr. Infineon
    Oneyac # A-IPD50N06S4L08ATMA2
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3, DPak (2-lead + tab), SC-63

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Vgs(Max) ±16V
    Current at 25°C-Continuous Drain (Id) 50A(Tc)
    technology MOSFET (metal oxide)
    Drain-Source Voltage (Vdss) 60V
    fet type n channel
    Gate charge at different VGS (QG) (maximum) 64nC @ 10V
    Drive voltage (Max RdsOn, Minimum RdsOn) 4.5V,10V
    On resistance at different Id and Vgs (maximum) 7.8 milliohm @ 50a, 10V
    Vgs(th) (maximum) when different Id 2.2V @ 35uA
    Power dissipation (maximum) 71W(Tc)
    Operating temperature -55°C ~ 175°C(TJ)
    Input capacitance (Ciss) (maximum) at different Vds 4780pF @ 25V
    Package/Enclosure TO-252-3, DPak (2-lead + tab), SC-63
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