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Power MOSFET IPB35N10S3L-26 TO-263-3, D ² Pak (2 leads+tab), TO-263AB

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    MPN IPB35N10S3L26ATMA1
    Other # IPB35N10S3L-26
    Mfr. Infineon
    Oneyac # A-IPB35N10S3L26ATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-263-3, D ² Pak (2 leads+tab), TO-263AB

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 35A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 26.3 milliohms @ 35A, 10V
    Vgs (th) (maximum value) for different IDs 2.4V @ 39uA
    Input capacitance (Ciss) at different Vds (maximum value) 2700pF @ 25V
    Gate charge (Qg) at different Vgs (maximum value) 39nC @ 10V
    Power dissipation (maximum value) 71W(Tc)
    Package/Enclosure TO-263-3, D ² Pak (2 leads+tab), TO-263AB
    working temperature -55°C ~ 175°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 100V
    Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
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