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Power Mosfet IPB22N03S4L-15 TO-263-3, D²Pak (2-lead + tab), TO-263AB

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    MPN IPB22N03S4L15ATMA1
    Other # IPB22N03S4L-15
    Mfr. Infineon
    Oneyac # A-IPB22N03S4L15ATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263-3, D²Pak (2-lead + tab), TO-263AB

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Vgs(th) (maximum) when different Id 2.2V @ 10uA
    Vgs(Max) ±16V
    Current at 25°C-Continuous Drain (Id) 22A(Tc)
    Gate charge at different VGS (QG) (maximum) 14nC @ 10V
    Package/Enclosure TO-263-3, D²Pak (2-lead + tab), TO-263AB
    Power dissipation (maximum) 31W(Tc)
    Input capacitance (Ciss) (maximum) at different Vds 980pF @ 25V
    Operating temperature -55°C ~ 175°C(TJ)
    technology MOSFET (metal oxide)
    On resistance at different Id and Vgs (maximum) 14.6 milliohm @ 22a, 10V
    fet type n channel
    Drain-Source Voltage (Vdss) 30V
    Drive voltage (Max RdsOn, Minimum RdsOn) 4.5V,10V
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