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Power Mosfet IPA60R280P7S TO-220-3 whole package

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    MPN IPA60R280P7SXKSA1
    Other # IPA60R280P7S
    Mfr. Infineon
    Oneyac # A-IPA60R280P7SXKSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3 whole package

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Gate charge at different VGS (QG) (maximum) 18nC @ 10V
    Vgs(Max) ±20V
    Vgs(th) (maximum) when different Id 4V @ 190uA
    technology MOSFET (metal oxide)
    fet type n channel
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Power dissipation (maximum) 24W(Tc)
    Package/Enclosure TO-220-3 whole package
    Drain-Source Voltage (Vdss) 600V
    Current at 25°C-Continuous Drain (Id) 12A(Tc)
    Operating temperature -40°C ~ 150°C(TJ)
    Input capacitance (Ciss) (maximum) at different Vds 761pF @ 400V
    On resistance at different Id and Vgs (maximum) 280 milliohm @ 3.8a, 10V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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