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General MOSFET 10.1 x 4.7 x 9.4mm TO-220F TO-220F-3 TO-220-3

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    MPN FCPF16N60
    Mfr. ON Semiconductor
    Oneyac # A-FCPF16N60
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 10.1 x 4.7 x 9.4mm Package/Enclosure : TO-220F Package/Enclosure : TO-220F-3 Package/Enclosure : TO-220-3 Power Rating : 37.9 W

    Specifications FAQ

    Description Details Operation
    Product Category General MOSFET
    Transistor Material Si
    fet type Enhance
    Transistor Configuration Single
    Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum) 2250pF @ 25V
    Package/Enclosure 10.1 x 4.7 x 9.4mm
    Vgs (th) (maximum) at different Ids 5V @ 250µA
    Series SuperFET™
    Pd-power dissipation (Max) 37.9W(Tc)
    width 4.7mm
    Number Of Components Per Chip 1 Ohms
    Typical on-delay time 42 ns
    Drive voltage @Rds On (Max), Rds On (Min) 10V
    Rds On(Max)@Id,Vgs 260 m0hms
    Series SuperFET
    Package/Enclosure TO-220F
    Gate Charge (Qg) at Different Vgs (Maximum) 70nC @ 10V
    Working temperature +150 °C
    Drain-source voltage Vds 1730 pF @ 25 V
    length 10.1mm
    Continuous Drain Current Id 16A
    Power Rating 37.9 W
    fet type N-Channel
    Typical Off-Delay Time 165 ns
    Package/Enclosure TO-220F-3
    Continuous Drain Current Id 16 A
    Package/Enclosure TO-220-3
    height 9.4mm
    Rds On(Max)@Id,Vgs 260m Ohms@8A,10V
    Continuous Drain Current Id 16A(Tc)
    Gate voltage Vgs ±30V
    Operating temperature -55°C~150°C(TJ)
    Drain-source voltage Vds 600V
    Minimum Gate Threshold Voltage 3V
    Number Of Pins 3
    Gate voltage Vgs 5V
    Minimum working temperature -55 °C
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