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IGBT transistor TO-263-3, D ² Pak (2 leads+tab), TO-263AB

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    MPN IKB30N65EH5ATMA1
    Mfr. Infineon
    Oneyac # A-IKB30N65EH5ATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263-3, D ² Pak (2 leads+tab), TO-263AB

    Specifications FAQ

    Description Details Operation
    Product Category IGBT transistor
    Td (on/off) value at 25 ° C 24ns/159ns
    IGBT type Trench type field cutoff
    Vce (on) (maximum value) at different Vge and Ic 2.1V @ 15V,30A
    Power - maximum value 188W
    Reverse recovery time (trr) 75ns
    Package/Enclosure TO-263-3, D ² Pak (2 leads+tab), TO-263AB
    working temperature -40°C ~ 175°C(TJ)
    Switching energy 870uJ (on), 300uJ (off)
    Gate charge 70nC
    Test conditions 400V, 30A, 22 ohms, 15V
    Voltage emitter breakdown (maximum value) 650V
    Current collector (Ic) (maximum value) 55A
    Current collector pulse (Icm) 90A
    Input type standard
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